Forum | April 25, 2024 | 4PM (Stockholm)
Image is a cross-sectional cut of a PVT crystal from 1997. That was one way to get feedback on the growth. Early research with non uniform temperature profiles, micropipes, defects, poytype inclusions. Next, KOH etching of wafers to count micrpies (at that time more than 1000 per sqcm). XRD with as large footprint as possible to get average values in rocking curves. Recently I heard something new for me, about Analysis of micro- and macro-domains in SiC wafers by T-ray Imaging. We were discussing how to measure during growth, is that possible?
What can we expect for the future needs of wafer and boule characterization?
Let us meet for discussion on what is relevant and how we can know more about each others ideas.