3rd Forum on SiC Quantum Photonics

Presentations and discussion | Dec 10, 2024 | 9 AM(CET) | online via Zoom

“Silicon Carbide on Insulator Fabrication at Fraunhofer” – Martin Hofmann, Fraunhofer Institute for Integrated Systems and Device Technology IISB, Group Manager Quantum Materials and Nanostructures, Erlangen, Germany

“Detecting Er ions with long spin and optical coherence for quantum applications” – Dr Alexey Lyasota, UNSW, Australia

Chairs: Christiaan Bekker, School of Engineering & Physical Sciences, Institute of Photonics and Quantum Sciences Heriot-Watt University, United Kingdom and Prof. Stefania Castelletto, RMIT University, Melbourne, Australia

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The 2nd Forum on SiC Quantum Photonics focused on the potential of silicon carbide in quantum photonics, particularly in laser writing of single atomic defects beneath solid immersion lenses. The presentation by Dr. Christian Becker was about how to efficiently extract and store quantum information. This could be by precisely creating and controlling defects (like atomic vacancies) in SiC, which are the active centers for quantum technologies. He discussed the challenges of creating scalable and high-aspect ratio structures using grayscale lithography and the potential of modified silicon vacancies. The discussion included the importance of annealing, the role of stacking faults, and the potential for hybrid integration in SiC devices. The forum emphasized the need for international collaboration and future workshops to advance quantum photonics research.