Nov 7, 2024 | 9 AM (CET) .
Presentations and discussion
“Laser writing of single atomic defects beneath solid immersion lenses in silicon carbide” – Christian Bekker, School of Engineering & Physical Sciences, Institute of Photonics and Quantum Sciences Heriot-Watt University, United Kingdom
“Silicon Carbide on Insulator Fabrication at Fraunhofer” – Martin Hofmann, Fraunhofer Institute for Integrated Systems and Device Technology IISB, Group Manager Quantum Materials and Nanostructures, Erlangen, Germany
Chair: Prof. Stefania Castelletto, RMIT University, Melbourne, Australia
At this forum we will discuss next generation quantum devices based on Silicon Carbide (SiC). It also will have discussion on what we think SiC could be better employed in the next 5 years for quantum technologies applications, single photon sources, quantum sensing (what type of sensing?), quantum communication and networks or quantum computing.
The 1st Forum on SiC Quantum Photonics was held in July 2024. The meeting focused on the potential of silicon carbide (SiC) for quantum photonics, highlighting its low defect concentration and exceptional optical properties. It was discussed about the challenges and opportunities in creating SiC on insulator substrates, emphasizing the need for scalable processes. Participants shared their research on SiC for single photon sources and superconducting nanowire single-photon detectors, as well as exploration of alternative materials like 3C SiC and the potential of SiC for light emission. Future meetings were planned to continue discussions and explore collaborative projects.